AlGaN/GaN HFET Design for Switching Applications
نویسنده
چکیده
GALLIUM NITRIDE based heterojunction field-effect transistors (HFETs) show great promise for high-frequency, high-power, and high-temperature applications. Many researchers have fabricated AlGaN/GaN HFETs with very impressive results, including a device with a current handling capability of 1.25 A/mm on SiC substrates[2]. Assuming a sheet charge density of 1.4×1013 cm−2, and a saturation velocity of 1×107 cm/s, the maximum possible current is 2.25 A/mm. The large current handling capability of AlGaN/GaN HFETS is a result of the sheet charge densities, an order of magnitude larger than in AlGaAs/GaAs HEMTs. The origin of this charge has been attributed to “polarization” charge effects, even described as “piezoelectric doping”[3]. This report examines the effects of this polarization charge, particularly how the polarization charge can affect the breakdown voltage of high-power AlGaN/GaN HEMTs. Novel AlGaN/GaN HFET structures for switching applications are described and simulated.
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